Electrical spin injection and transport in germanium

Article

关键词: SPINTRONICS;    PRECESSION;    SILICON;    METAL;   

DOI  :  10.1103/PhysRevB.84.125323

来源: SCIE

【 摘 要 】

We report the first experimental demonstration of electrical spin injection, transport, and detection in bulk germanium (Ge). The nonlocal magnetoresistance (MR) in n-type Ge is observable up to 225 K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal MR and the spin lifetime in n-type Ge is also investigated.

【 授权许可】

Free