Spin-orbit interaction in InSb nanowires

Article

关键词: WEAK-LOCALIZATION;    SUPERCONDUCTOR;    RELAXATION;    ELECTRONS;   

DOI  :  10.1103/PhysRevB.91.201413

来源: SCIE

【 摘 要 】

We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoretical analysis of weak antilocalization, to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of 0.5-1 eV angstrom corresponding to a spin-orbit energy of 0.25-1 meV. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices.

【 授权许可】

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