Photoinduced Chern insulating states in semi-Dirac materials

Article

关键词: TOPOLOGICAL PHASE-TRANSITION;    QUANTUM-WELLS;    GRAPHENE;    SEMIMETAL;    PRESSURE;    SURFACE;   

DOI  :  10.1103/PhysRevB.94.081103

来源: SCIE

【 摘 要 】

Two-dimensional (2D) semi-Dirac materials are characterized by a quadratic dispersion in one direction and a linear dispersion along the orthogonal direction. We study the topological phase transition in such 2D systems in the presence of an electromagnetic field. We show that a Chern insulating state emerges in a semi-Dirac system with two gapless Dirac nodes in the presence of light. In particular, we show that the intensity of a circularly polarized light can be used as a knob to generate topological states with nonzero Chern number. In addition, for fixed intensity and frequency of the light, a semi-Dirac system with two gapped Dirac nodes with trivial band topology can reveal the topological transition as a function of polarization of the light.

【 授权许可】

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