Multiplicity of atomic reconfigurations in an electrochemical Pb single-atom transistor

Article

关键词: QUANTIZED CONDUCTANCE;    SIZE CONTACTS;    TRANSPORT;    SWITCHES;    MOLECULE;    SURFACE;    TIP;    RECONSTRUCTION;    NANOWIRES;    JUNCTIONS;   

DOI  :  10.1103/PhysRevB.95.195415

来源: SCIE

【 摘 要 】

One focus of nanoelectronics research is to exploit the physical limits in size and energy efficiency. Here, we demonstrate a device in the form of a fully metallic atomic-scale transistor based on a lead (Pb) single-atom quantum point contact. The atomic configuration of the point contact determines the conductance of the Pb atomic-scale transistor. The conductance multiplicity of the Pb single-atom transistor has been confirmed by performing switching between an electrically nonconducting off-state and conducting on-states at 1G(0)(G(0) = 2e(2)/h, where e is the electron charge, and h Planck's constant), 2.0 G(0), 3.0 G(0), 1.5 G(0), 2.4 G(0), 2.7 G(0), 2.8 G(0), and 5.4 G(0), respectively. Our density-functional calculations for various ideal Pb single-atom contacts explain the atomic-configuration-related conductance multiplicity of the Pb single-atom transistor. The performance of the Pb single-atom transistors indicates that both the signatures of atomic valence and conductance quantization play roles in electron transport and bistable reconfiguration. The bistable reconfiguration of the electrode tips is an underlying mechanism in the switching of the Pb atomic-scale transistors. The absolute value of the electrochemical potential applied to the gate electrode is less than 30 mV. This merit suggests Pb [besides silver (Ag)] atomic-scale transistors as potential candidates for the development of electronic circuits with low power consumption. The dimension of the switching unit in the Pb single-atom transistor is in the range of 1 nm, which is much smaller than the projected scaling limit of the gate lengths in silicon transistors (5 nm). Therefore, the metallic single-atom transistors may provide perspectives for electronic applications beyond silicon.

【 授权许可】

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