Quantum mechanical modeling of anharmonic phonon-phonon scattering in nanostructures

Article

关键词: THERMAL-CONDUCTIVITY;    TRANSPORT;   

DOI  :  10.1103/PhysRevB.102.195412

来源: SCIE

【 摘 要 】

The coherent quantum effect has become increasingly important in the heat dissipation bottleneck of semiconductor nanoelectronics with the characteristic size recently shrinking down to a few nanometers scale. However, the quantum mechanical model remains elusive for anharmonic phonon-phonon scattering in extremely small nanostructures with broken translational symmetry. It is a long-term challenging task to correctly simulate quantum heat transport including anharmonic scattering at a scale relevant to practical applications. In this article, we present a clarified theoretical formulation of anharmonic phonon nonequilibrium Green's function (NEGF) formalism for both one- and three-dimensional nanostructures, through a diagrammatic perturbation expansion and an introduction of Fourier's representation to both harmonic and anharmonic terms. A parallelized computational framework with first-principle force constants input is developed for large-scale quantum heat transport simulation. Some crucial approximations in numerical implementation are investigated to ensure the balance between numerical accuracy and efficiency. A quantitative validation is demonstrated for the anharmonic phonon NEGF formalism and computational framework by modeling cross-plane heat transport through a silicon thin film. The phonon-phonon scattering is shown to appreciably enhance the thermal resistance or conductance in extremely small homogeneous or heterogeneous thin films. The present methodology provides a robust platform for the device quantum thermal modeling, as well as a study on the transition from coherent to incoherent heat transport in nanophononic crystals. This work thus paves the way to understand and to manipulate heat conduction via the wave nature of phonons.

【 授权许可】

Free