期刊论文详细信息
Kondo effect in defect-bound quantum dots coupled to NbSe2
Article
关键词: LARGE-N EXPANSION;    RENORMALIZATION-GROUP;    IMPURITIES;    RESISTANCE;   
DOI  :  10.1103/PhysRevB.107.094502
来源: SCIE
【 摘 要 】

We report the fabrication of a van der Waals tunneling device hosting a defect-bound quantum dot coupled to NbSe2. We find that upon application of a magnetic field, the device exhibits a zero-bias conductance peak. The peak, which splits at higher fields, is associated with a Kondo effect. At the same time, the junction retains conventional quasiparticle tunneling features at finite bias. Such coexistence of a superconducting gap and a Kondo effect are unusual, and are explained by noting the two-gap nature of the superconducting state of NbSe2, where a magnetic field suppresses the low-energy gap associated with the Se band. Our data shows that van der Waals architectures, and defect-bound dots in them, can serve as an effective platform for investigating the interplay of Kondo screening and superconducting pairing in unconventional superconductors.

【 授权许可】

Free   

  文献评价指标  
  下载次数:0次 浏览次数:3次