OBSERVATION OF CARRIER-CONCENTRATION-DEPENDENT REFLECTIONLESS TUNNELING IN A SUPERCONDUCTOR 2-DIMENSIONAL-ELECTRON-GAS SUPERCONDUCTOR STRUCTURE

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关键词: SEMICONDUCTOR CONTACTS;    SI;    CONDUCTANCE;    FABRICATION;    DEPOSITION;    GEH4;    GATE;    WF6;   

DOI  :  10.1103/PhysRevB.49.13275

来源: SCIE

【 摘 要 】

We report on the conductance of a short (<100 nm) silicon-based two-dimensional electron gas with superconducting source and drain electrodes. Below 1 K a zero-bias enhanced conductance is observed which depends on the carrier concentration in the electron gas. The data can qualitatively be understood as due to reflectionless tunneling, i.e., quantum-coherent-enhanced Andreev scattering.

【 授权许可】

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