Optoelectric spin injection in semiconductor heterostructures without a ferromagnet

Article

关键词: POLARIZATION;    RELAXATION;    GAAS;   

DOI  :  10.1103/PhysRevB.65.241308

来源: SCIE

【 摘 要 】

We have shown that electron-spin density can be generated by a dc current flowing across a pn junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin-split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the n-doped region of the pn junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.

【 授权许可】

Free