Scaling of 1/f noise in tunable break junctions

Article

关键词: UNIVERSAL CONDUCTANCE FLUCTUATIONS;    1-F NOISE;    RESISTANCE FLUCTUATIONS;    SHOT-NOISE;    THERMAL AGITATION;    METAL NANOBRIDGES;    POINT-CONTACT;    DEVICES;    WIRES;    ELECTROMIGRATION;   

DOI  :  10.1103/PhysRevB.78.235421

来源: SCIE

【 摘 要 】

We have studied the 1/f voltage noise of gold nanocontacts in electromigrated and mechanically controlled break junctions having resistance values R that can be tuned from 10 Omega (many channels) to 10 k Omega (single-atom contact). The noise is caused by resistance fluctuations as evidenced by the S(V)proportional to V(2) dependence of the power-spectral density S(V) on the applied dc voltage V. As a function of R the normalized noise S(V)/V(2) shows a pronounced crossover from proportional to R(3) for low-Ohmic junctions to proportional to R(1.5) for high-Ohmic ones. The measured powers of 3 and 1.5 are in agreement with 1/f noise generated in the bulk and reflect the transition from diffusive to ballistic transport.

【 授权许可】

Free