Universal zero-bias conductance for the single-electron transistor

Article

关键词: NUMERICAL RENORMALIZATION-GROUP;    DILUTE MAGNETIC-ALLOYS;    DOUBLE-QUANTUM DOTS;    ANDERSON MODEL;    KONDO RESONANCE;    STATIC PROPERTIES;    IMPURITY STATES;    TRANSPORT;    MOLECULE;    METALS;   

DOI  :  10.1103/PhysRevB.80.235317

来源: SCIE

【 摘 要 】

The thermal dependence of the zero-bias conductance for the single electron transistor is the target of two independent renormalization-group approaches, both based on the spin-degenerate Anderson impurity model. The first approach, an analytical derivation, maps the Kondo-regime conductance onto the universal conductance function for the particle-hole symmetric model. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. The second approach, a numerical renormalization-group computation of the conductance as a function the temperature and applied gate voltages offers a comprehensive view of zero-bias charge transport through the device. The first approach is exact in the Kondo regime; the second, essentially exact throughout the parametric space of the model. For illustrative purposes, conductance curves resulting from the two approaches are compared.

【 授权许可】

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