Self-assembly of defect-free nanostripe arrays on B-doped Si(001)

Article

关键词: PERIODIC DOMAIN-STRUCTURES;    SHAPE TRANSITION;    STRIPED PHASE;    001 SURFACE;    STEP;    SILICON;    ISLANDS;    STRESS;    GROWTH;   

DOI  :  10.1103/PhysRevB.83.205432

来源: SCIE

【 摘 要 】

We have developed a method to grow large, self-assembled, defect-free arrays of vacancy or adatom stripes on atomically flat, boron-doped Si(001)-(2x1). The subnanometer-high stripes form between similar to 870 and 990 degrees C, with a spacing that depends on temperature. Si deposition is used to prevent sublimation-induced defect formation and to allow time for ordering via surface diffusion. Ordering mechanisms, observed in real time by low-energy electron microscopy, include island nucleation and growth, longitudinal splitting, and coarsening. At formation temperatures, the arrays are only stable when the area fractions of vacancy (theta(v)) or adatom stripes (theta(a)) are similar to 1/2, consistent with stress domain theory predictions. At room temperature, arrays are preserved indefinitely and are a potential template for nanowire growth.

【 授权许可】

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