Hillock formation of Pt thin films on single-crystal yttria-stabilized zirconia

Article

关键词: ISLAND SHAPE FLUCTUATIONS;    CAPILLARY INSTABILITIES;    STRESS-RELAXATION;    STEP ENERGIES;    GROWTH;    PT(111);    SURFACE;    THERMODYNAMICS;    KINETICS;    AGGLOMERATION;   

DOI  :  10.1103/PhysRevB.85.125408

来源: SCIE

【 摘 要 】

The stability of metal thin films on a dielectric substrate is conditioned by the magnitude of the interactive forces at the interface. In the case of a nonreactive interface and weak adhesion, the minimization of the free surface energy gives rise to an instability of the thin film. In order to study these effects, Pt thin films with a thickness of 50 nm were deposited via ion-beam sputtering on yttria-stabilized zirconia single crystals. All Pt films were subjected to heat treatments up to 973 K for 2 h. The morphological evolution of Pt thin films has been investigated by means of scanning electron microscopy, atomic force microscopy, and standard image analysis techniques. Three main observations have been made: (i) The deposition method has a direct impact on the morphological evolution of the film during annealing. Instead of hole formation, which is typically observed as a response to a thermal treatment, anisotropic pyramidal-shaped hillocks are formed on top of the film. (ii) It is shown by comparing the hillocks' aspect ratio with finite element method simulations that the hillock formation can be assigned to a stress relaxation process inside the thin film. (iii) By measuring the quasiequilibrium shapes and the shape fluctuations of the formed Pt hillocks the anisotropy of the step free energy and its stiffness have been derived in addition to the anisotropic kink energy of the hillocks' edges.

【 授权许可】

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