Dopant enhanced neutralization of low-energy Li+ scattered from Si(111)

Article

关键词: HEAVILY DOPED SILICON;    MANY-BODY THEORY;    CHARGE-TRANSFER;    METAL-SURFACES;    HYDROGEN;    LEVEL;    SPECTROSCOPY;    DESORPTION;    EXCHANGE;    ATOMS;   

DOI  :  10.1103/PhysRevB.85.165307

来源: SCIE

【 摘 要 】

The neutralization of 3 keV Li+ ions scattered from Si(111) is measured as a function of doping density, dopant type, and hydrogen coverage. When the surfaces are saturated with hydrogen to unpin the Fermi level, the neutral fractions decrease for lightly doped samples but become anomalously large for highly doped n-type Si. A simple model that includes the many-body band-gap narrowing effect predicts the neutralization to good accuracy using a tunneling mechanism similar to the free-electron gas jellium model normally employed for ion/metal interactions, but excluding levels in the gap.

【 授权许可】

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