Hole-mobility-limiting atomic structures in hydrogenated amorphous silicon

Article

关键词: TIME-OF-FLIGHT;    A-SI-H;    DRIFT MOBILITY;    DANGLING-BOND;    SOLAR-CELLS;    ELECTRON;    DEFECTS;    STATES;    MICROCRYSTALLINE;    SEMICONDUCTORS;   

DOI  :  10.1103/PhysRevB.90.104103

来源: SCIE

【 摘 要 】

Low hole mobility currently limits the efficiency of amorphous silicon photovoltaic devices. We explore three possible phenomena contributing to this low mobility: coordination defects, self-trapping ionization displacement defects, and lattice expansion allowing for hole wave-function delocalization. Through a confluence of experimental and first-principles investigations, we demonstrate the fluidity of the relative prevalence of these defects as film stress and hydrogen content are modified, and that the mobility of a film is governed by an interplay between various defect types.

【 授权许可】

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