期刊论文详细信息
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN | |
Article | |
关键词: DOPED GAN; DOMINANT ACCEPTOR; PHOTOLUMINESCENCE; VACANCIES; MOBILITY; ENERGY; OXYGEN; | |
DOI : 10.1103/PhysRevB.90.235203 | |
来源: SCIE |
【 摘 要 】
In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band to the 0/+ level of the isolated C-N defect. The YL band, related to transitions via the -/0 level of the same defect, has a maximum at 2.1 eV and can be observed only for some high-purity samples. However, in less pure GaN samples, where no GL band is observed, another YL band with a maximum at 2.2 eV dominates the photoluminescence spectrum. The latter is attributed to the CNON complex.【 授权许可】
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