Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

Article

关键词: PIEZORESPONSE FORCE MICROSCOPY;    SOLID-SOLUTION SYSTEM;    THIN-FILMS;    DOMAIN-WALLS;    THERMODYNAMIC THEORY;    INDUCED POLARIZATION;    NANOSCALE;    SURFACE;    INDENTATION;    NANOELECTROMECHANICS;   

DOI  :  10.1103/PhysRevB.96.184109

来源: SCIE

【 摘 要 】

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. We show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressure and film thickness with nontrivial topology or switchable and nonswitchable regions.

【 授权许可】

Free