Pressure-induced structural and electronic transitions, metallization, and enhanced visible-light responsiveness in layered rhenium disulphide

Article

关键词: CRYSTAL-STRUCTURE;    RES2;    CONDUCTIVITY;    DIFFRACTION;    CALIBRATION;    DENSITY;    STATE;   

DOI  :  10.1103/PhysRevB.97.235202

来源: SCIE

【 摘 要 】

Triclinic rhenium disulphide (ReS2) is a promising candidate for postsilicon electronics because of its unique optic-electronic properties. The electrical and optical properties of ReS2 under high pressure, however, remain unclear. Here we present a joint experimental and theoretical study on the structure, electronic, and vibrational properties, and visible-light responses of ReS2 up to 50 GPa. There is a direct-to-indirect band-gap transition in 1T-ReS2 under low-pressure regime up to 5 GPa. Upon further compression, 1T-ReS2 undergoes a structural transition to distorted-1T' phase at 7.7 GPa, followed by the isostructural metallization at 38.5 GPa. Both in situ Raman spectrum and electronic structure analysis reveal that interlayer sulfur-sulfur interaction is greatly enhanced during compression, leading to the remarkable modifications on the electronic properties observed in our subsequent experimental measurements, such as band-gap closure and enhanced photoresponsiveness. This study demonstrates the critical role of pressure in tuning materials properties and the potential usage of layered ReS2 for pressure-responsive optoelectronic applications.

【 授权许可】

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