Interaction-induced crossover between weak antilocalization and weak localization in a disordered InAs/GaSb double quantum well

Article

关键词: SPIN-ORBIT INTERACTION;    2-DIMENSIONAL ELECTRON;    BEHAVIOR;   

DOI  :  10.1103/PhysRevB.101.155302

来源: SCIE

【 摘 要 】

We present a magnetotransport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top-gate electrode, we observe a crossover from weak antilocalization (WAL) to weak localization (WL), when the inelastic phase-breaking time decreases below spin-orbit characteristic time as a result of enhanced electron-electron interactions at lower carrier concentrations. The same crossover is observed with increasing temperature. The linear temperature behavior of inelastic scattering rate indicates that the dominant phase-breaking mechanism in our 2D system is due to electron-electron interaction.

【 授权许可】

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