Conductance of gated junctions as a probe of topological interface states

Article

关键词: BI2SE3;   

DOI  :  10.1103/PhysRevB.102.125308

来源: SCIE

【 摘 要 】

Energy dispersion and spin orientation of the protected states at an interface between topological insulators and nontopological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge of these properties is essential for applications of topological compounds, but direct access to them in the interface geometry is difficult. We show that conductance of a gated double junction at the surface of a topological insulator exhibits oscillations and a quasilinear decay as a function of gate voltage in different regimes. These give the values for the quasiparticle velocities along and normal to the junction in the interface region, and determine the symmetry of the topological interface states. The results are insensitive to the boundary conditions at the junction.

【 授权许可】

Free