MAGNETIC-FIELD EFFECTS ON SWITCHING NOISE IN A QUANTUM POINT CONTACT

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关键词: ELECTRON-GAS;    RESISTANCE;    TRANSPORT;   

DOI  :  10.1103/PhysRevB.46.15523

来源: SCIE

【 摘 要 】

We extend a previous study of the quantum-size effect on switching noise in a GaAs/AlxGa1-xAs quantum point contact in zero magnetic field to the quantum Hall regime. The experimental results agree well with a model based on temporal electrostatic fluctuations of the conduction-band bottom in the point contact. A confirmation of our interpretation is obtained by a direct comparison of the noise data with measurements of the transconductance. The analysis of the data suggests that the Lande g factor in a quantum point contact is enhanced with respect to the low bare g factor of GaAs.

【 授权许可】

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