Reflection of light and heavy holes from a linear potential barrier

Article

关键词: SURFACE-STATES;    BAND-STRUCTURE;    HETEROJUNCTIONS;    MODEL;   

DOI  :  10.1103/PhysRevB.62.16566

来源: SCIE

【 摘 要 】

In this paper, we study reflection of holes in direct-band semiconductors from a linear potential barrier. It is shown that the light-hole-heavy-hole transformation matrix depends only on the dimensionless product of the light-hole longitudinal momentum and the characteristic length determined by the slope of the potential and it does not depend on the ratio of light- and heavy-hole masses, provided this ratio is small. This coefficient is shown to vanish both in the limit of small and large longitudinal momenta, however the phase of a reflected hole is different in these Limits. An approximate analytical expression for the light-hole-heavy-hole transformation coefficient is found.

【 授权许可】

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