Growth of epitaxial Yb silicide on Si(100) studied by metastable atom deexcitation spectroscopy and photemission

Article

关键词: ELECTRONIC-STRUCTURE;    THIN-FILMS;    ERBIUM SILICIDE;    SI(001) SURFACE;    SI(111);    STATES;    INTERFACE;    ADSORPTION;    METAL;    BA;   

DOI  :  10.1103/PhysRevB.65.115417

来源: SCIE

【 摘 要 】

Films of different Yb thickness are deposited on Si(100) 2x1 and are annealed at increasing high temperature. The evolution of the valence-band electronic properties is followed with metastable deexcitation spectroscopy and photoemission. Different surface-structure phases are observed at progressively high annealing temperature. A 3x1 ordered phase is observed by low-energy electron diffraction (LEED) after annealing of the films at about 640 degreesC and it is associated to the formation of a stable silicide. Correspondingly, electronic states assigned to the Yb 6s-5d hybridized band and to Si 3s and 3p bands in the compound are observed. A further increase of the annealing temperature causes the system to evolve rapidly. At T>650 degreesC the LEED pattern shows a 3x2 periodicity. Above 700 degreesC, the films present a character similar to that of the Si substrate.

【 授权许可】

Free