Growth of epitaxial Yb silicide on Si(100) studied by metastable atom deexcitation spectroscopy and photemission | |
Article | |
关键词: ELECTRONIC-STRUCTURE; THIN-FILMS; ERBIUM SILICIDE; SI(001) SURFACE; SI(111); STATES; INTERFACE; ADSORPTION; METAL; BA; | |
DOI : 10.1103/PhysRevB.65.115417 | |
来源: SCIE |
【 摘 要 】
Films of different Yb thickness are deposited on Si(100) 2x1 and are annealed at increasing high temperature. The evolution of the valence-band electronic properties is followed with metastable deexcitation spectroscopy and photoemission. Different surface-structure phases are observed at progressively high annealing temperature. A 3x1 ordered phase is observed by low-energy electron diffraction (LEED) after annealing of the films at about 640 degreesC and it is associated to the formation of a stable silicide. Correspondingly, electronic states assigned to the Yb 6s-5d hybridized band and to Si 3s and 3p bands in the compound are observed. A further increase of the annealing temperature causes the system to evolve rapidly. At T>650 degreesC the LEED pattern shows a 3x2 periodicity. Above 700 degreesC, the films present a character similar to that of the Si substrate.
【 授权许可】
Free