Asymmetry gap in the electronic band structure of bilayer graphene

Article

关键词: BERRYS PHASE;    INTERCALATION COMPOUNDS;    CARBON NANOTUBES;    GRAPHITE;    CONDUCTIVITY;   

DOI  :  10.1103/PhysRevB.74.161403

来源: SCIE

【 摘 要 】

A tight-binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap Delta between the conduction and valence bands. In particular, a self-consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap Delta(n). We discuss the influence of a finite asymmetry gap Delta(0) at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect.

【 授权许可】

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