Influence of photoexcitation on the diamagnetic muonium states in Ge studied via their precession signatures

Article

关键词: N-TYPE GAAS;    NEGATIVELY CHARGED MUONIUM;    BOND-CENTERED MUONIUM;    CRYSTALLINE SEMICONDUCTORS;    SPIN SUSCEPTIBILITY;    HYDROGEN;    DYNAMICS;    SI;    DEFECTS;    SILICON;   

DOI  :  10.1103/PhysRevB.78.153203

来源: SCIE

【 摘 要 】

By using photoexcitation, we unambiguously establish that the well-known diamagnetic muonium spin precession signal in Ge is in fact due to two diamagnetic states. Their temperature dependences are studied up to room temperature. The signal due to one of these states is strongly influenced by the photoexcited carriers while the other is not. The identification of these two centers is discussed.

【 授权许可】

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