| Ambipolar transition voltage spectroscopy: Analytical results and experimental agreement | |
| Article | |
| 关键词: SCANNING-TUNNELING-MICROSCOPY; MOLECULAR JUNCTIONS; TRANSPORT; ELECTRON; WIRES; RESISTANCE; LONG; | |
| DOI : 10.1103/PhysRevB.85.035442 | |
| 来源: SCIE | |
【 摘 要 】
This work emphasizes that the transition voltages V-t +/- for both bias polarities (V greater than or less than 0) should be used to properly determine the energy offset epsilon(0) of the molecular orbital closest to electrodes' Fermi level and the bias asymmetry gamma in molecular junctions. Accurate analytical formulas are deduced to estimate epsilon(0) and gamma solely in terms of V-t +/-. These estimates are validated against experiments, by showing that full experimental I-V curves measured by Beebe et al. [Phys. Rev. Lett. 97, 026801 (2006)] and Tan et al. [Appl. Phys. Lett. 96, 013110 (2010)] for both bias polarities can be excellently reproduced.
【 授权许可】
Free