Zero-energy bound state at the interface between an s-wave superconductor and a disordered normal metal with repulsive electron-electron interactions

Article

关键词: DENSITY-OF-STATES;    SUSPENDED GRAPHENE;    MAJORANA FERMIONS;    CONDUCTANCE;    CONTACTS;    BIAS;    CONDUCTIVITY;    INSTABILITY;    EQUATIONS;    TRANSPORT;   

DOI  :  10.1103/PhysRevB.90.024502

来源: SCIE

【 摘 要 】

In recent years, there has been a renewed interest in the proximity effect due to its role in the realization of topological superconductivity. Here, we study a superconductor-normal metal proximity system with repulsive electron-electron interactions in the normal layer. It is known that in the absence of disorder or normal reflection at the superconductor-normal metal interface, a zero-energy bound state forms and is localized to the interface [Fauchere et al., Phys. Rev. Lett. 82, 3336 (1999)]. Using the quasiclassical theory of superconductivity, we investigate the low-energy behavior of the density of states in the presence of finite disorder and an interfacial barrier. We find that as the mean free path is decreased, the zero-energy peak in the density of states is broadened and reduced. In the quasiballistic limit, the bound state eliminates the minigap pertinent to a noninteracting normal layer and a distinct peak is observed. When the mean free path becomes comparable to the normal layer width, the zero-energy peak is strongly suppressed and the minigap begins to develop. In the diffusive limit, the minigap is fully restored and all signatures of the bound state are eliminated. We find that an interfacial potential barrier does not change the functional form of the density of states peak but does shift this peak away from zero energy.

【 授权许可】

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