Atomically dispersed tungsten on metal halide monolayer as a ferromagnetic Chern insulator

Article

关键词: HALL;    REALIZATION;    DEPENDENCE;    STATE;   

DOI  :  10.1103/PhysRevB.98.115424

来源: SCIE

【 摘 要 】

Although the quantum anomalous Hall (QAH) effect has been experimentally observed in several magnetically doped topological insulators, up to now, it only survives at a very low temperature. More suitable candidate QAH insulators that can work at high temperature are much desired. Here, we propose an experimentally feasible way to realize a robust QAH insulator: atomically dispersed transition metals (e.g., W) on a two-dimensional porous metal halide normal insulator (e.g., InI3), which has been developed as a state-of-the-art chemical technology broadly adopted for homogeneous catalysis. Based on the first-principles calculations, we predict that the atomic W embedded in an InI3 monolayer forms an intrinsic ferromagnetic QAH insulator, which exhibits robust uniform out-of-plane ferromagnetic order up to similar to 160 K and a topologically nontrivial band gap of 56 meV with a nonzero Chern number (vertical bar C vertical bar = 2). We also study its magneto-optical Kerr effect and collective plasma excitation modes, which may help for further experimental verifications and measurement of interesting physical features of Dirac-like electronic dispersion. Our results introduce a feasible method to obtain the QAH effect, which may motivate intensive experimental interest in this field.

【 授权许可】

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