Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots

Article

关键词: CYCLOTRON-RESONANCE;    STRAIN DISTRIBUTION;    OPTICAL-PROPERTIES;    SEMICONDUCTORS;    ENERGY;    GAP;    HETEROSTRUCTURES;    DEPENDENCE;    ALIGNMENT;    MODEL;   

DOI  :  10.1103/PhysRevB.100.115424

来源: SCIE

【 摘 要 】

Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is attractive for applications in quantum information technology, showing advantages as compared to the widely studied (In, Ga) As/GaAs dots. We proceed from the inspection of the confinement potentials for k not equal 0 and k = 0 conduction and k = 0 valence bands, through the formulation of k . p calculations for k-indirect transitions, up to the excitonic structure of Gamma transitions. Throughout this process we compare the results obtained for dots on both GaP and GaAs substrates, enabling us to make a direct comparison to the (In, Ga) As/GaAs quantum dot system. We also discuss the realization of quantum gates.

【 授权许可】

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