Topologically protected gap states and resonances in gated trilayer graphene

Article

关键词: BILAYER GRAPHENE;    BAND-GAP;    TRANSPORT;    BOUNDARIES;    ABA;   

DOI  :  10.1103/PhysRevB.102.035424

来源: SCIE

【 摘 要 】

Gated trilayer graphene exhibits an energy gap in its most stable ABC stacking. Here we show that when the stacking order changes from ABC to CBA, three gapless states appear in each valley. The states are topologically protected, and their number is related to the change in the valley Chern number across the stacking boundary. The stacking change is achieved by corrugation or delamination in the top and bottom layers, which simultaneously yields two AB/BA stacking domain walls in the pairs of adjacent layers (in bilayers). This in turn causes, for some gate voltages, two pairs of topological resonances to appear additionally in the conduction and valence band continua.

【 授权许可】

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