THERMAL-STABILITY OF THE [(SI)M/(GE)N]P SUPERLATTICE INTERFACE

Article

关键词: SILICON-GERMANIUM ALLOYS;    X-RAY ABSORPTION;    EXAFS;    INTERDIFFUSION;    CRYSTALS;    GROWTH;   

DOI  :  10.1103/PhysRevB.45.13591

来源: SCIE

【 摘 要 】

The structure of [(Si)m/(Ge)n]p superlattice interfaces and the onset of relaxation and interdiffusion initiated by annealing have been investigated with the use of extended x-ray-absorption fine structure and Raman scattering. For the as-grown material, the Ge-Ge bond length (0.2409 nm) was equal to that calculated for a fully strained Ge layer (0.2412 nm) while the Si-Ge bond length was significantly shorter. The results show conclusively that substantial intermixing along with partial relaxation of the Ge-Ge bonds occurs even for the shortest anneal at 700-degrees-C.

【 授权许可】

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