期刊论文详细信息
THERMAL-STABILITY OF THE [(SI)M/(GE)N]P SUPERLATTICE INTERFACE | |
Article | |
关键词: SILICON-GERMANIUM ALLOYS; X-RAY ABSORPTION; EXAFS; INTERDIFFUSION; CRYSTALS; GROWTH; | |
DOI : 10.1103/PhysRevB.45.13591 | |
来源: SCIE |
【 摘 要 】
The structure of [(Si)m/(Ge)n]p superlattice interfaces and the onset of relaxation and interdiffusion initiated by annealing have been investigated with the use of extended x-ray-absorption fine structure and Raman scattering. For the as-grown material, the Ge-Ge bond length (0.2409 nm) was equal to that calculated for a fully strained Ge layer (0.2412 nm) while the Si-Ge bond length was significantly shorter. The results show conclusively that substantial intermixing along with partial relaxation of the Ge-Ge bonds occurs even for the shortest anneal at 700-degrees-C.
【 授权许可】
Free