Epitaxial thin-film growth of C-60 on VSe2 studied with scanning tunneling microscopy and x-ray diffraction

Article

关键词: DIFFUSION-LIMITED AGGREGATION;    ELECTRONIC-STRUCTURES;    SURFACES;    SPECTROSCOPY;    SCATTERING;    LAYERS;    SITES;    C60;    STM;   

DOI  :  10.1103/PhysRevB.59.13394

来源: SCIE

【 摘 要 】

The growth of C-60 films On layered IT-VSe2 has been investigated by combined scanning tunneling microscopy (STM) and x-ray diffraction. The STM results are discussed in the framework of the diffusion limited aggregation (DLA) model. Particularly, the crossover from fractal to uniform growth as a function of the aggregated particle concentration is studied and discussed in the context of DLA. The averaged vertical structure is determined by Bragg diffraction and x-ray reflectivity and is explained in conjunction with the STM results. The epitaxial growth in the (111) direction is confirmed and a homogeneous layer thickness is found. Interfacial roughness and the averaged dispersion of the film are derived from the data. [S0163-1829(99)10019-5].

【 授权许可】

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