Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1-xMnxAs

Article

关键词: GAAS;    (GA,MN)AS;    SCATTERING;    TRANSPORT;    INP;   

DOI  :  10.1103/PhysRevB.66.033202

来源: SCIE

【 摘 要 】

A measurement of the hole density in the ferromagnetic semiconductor Ga1-xMnxAs is notoriously difficult using standard transport techniques due to the dominance of the anomalous Hall effect. Here we report a spectroscopic measurement of the hole density in four Ga1-xMnxAs samples (x=0, 0.038, 0.061, and 0.083) at room temperature using a Raman-scattering intensity analysis of the coupled plasmon-LO-phonon mode and the unscreened LO phonon. The unscreened LO-phonon frequency linearly decreases as the Mn concentration increases up to 8.3%. The hole density determined from the Raman scattering shows a monotonic increase with increasing x for xless than or equal to0.083, exhibiting a direct correlation to the observed T-c. The optical technique reported here provides an unambiguous means of determining the hole density in this important class of spintronic semiconductor materials.

【 授权许可】

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