Temperature-dependent magnetization in diluted magnetic semiconductors

Article

关键词: METAL-INSULATOR-TRANSITION;    DYNAMICAL MEAN-FIELD;    III-V SEMICONDUCTORS;    FERROMAGNETIC SEMICONDUCTORS;    MEDIATED FERROMAGNETISM;    ROOM-TEMPERATURE;    KONDO LATTICE;    GA1-XMNXAS;    (GA,MN)AS;    MODEL;   

DOI  :  10.1103/PhysRevB.67.155201

来源: SCIE

【 摘 要 】

We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of our mean-field calculations, particularly the dynamical mean-field theory results, give excellent qualitative agreement with the experimentally observed magnetization in systems with itinerant charge carriers, such as Ga1-xMnxAs with 0.03

【 授权许可】

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