Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

Article

关键词: ELECTRONIC-STRUCTURE;    METAL-SURFACES;    MONOLAYER;    NANOMESH;    INTERCALATION;    TEMPERATURE;    NANOTUBES;    GRAPHITE;    STATES;   

DOI  :  10.1103/PhysRevB.82.075415

来源: SCIE

【 摘 要 】

We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the rigid into the quasifreestanding state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.

【 授权许可】

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