Layer-number determination in graphene by out-of-plane phonons

Article

关键词: RAMAN-SPECTROSCOPY;    BAND-GAP;    TRILAYER GRAPHENE;    BILAYER GRAPHENE;    SCATTERING;    THICKNESS;    GRAPHITE;    RATIO;   

DOI  :  10.1103/PhysRevB.85.235447

来源: SCIE

【 摘 要 】

We present and discuss a double-resonant Raman mode in few-layer graphene that is able to probe the number of graphene layers. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes-anti-Stokes process combining an longitudinal optical (LO) and an out-of-plane (ZO') phonon. Simulations of the double-resonant Raman spectra in bilayer graphene show very good agreement with the experiments.

【 授权许可】

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