Enhanced spin Hall effect in strong magnetic disorder

Article

关键词: ANDERSON TRANSITIONS;    CONDUCTION ELECTRONS;    ROOM-TEMPERATURE;    WAVE-FUNCTIONS;    MOBILITY EDGE;    SYSTEMS;    SEMICONDUCTORS;    DYNAMICS;    LOCALIZATION;    CRITICALITY;   

DOI  :  10.1103/PhysRevB.86.245420

来源: SCIE

【 摘 要 】

We consider a two-dimensional electron gas in an inversion asymmetric layer and in the presence of spatially distributed magnetic impurities. We investigate the relationship between the geometrical properties of the wave function and the system's spin-dependent transport properties. A localization transition, arising when disorder is increased, is exhibited by the appearance of a fractal state with finite inverse participation ratio. Below the transition, interference effects modify the carrier's diffusion, as revealed by the dependence on the scattering time of the power law exponents characterizing the spreading of a wave packet. Above the transition, in the strong disorder regime, we find that the states are spin polarized and localized around the impurities. A significant enhancement of the spin current develops in this regime. DOI: 10.1103/PhysRevB.86.245420

【 授权许可】

Free