Tunneling through Al/AlOx/Al junction: Analytical models and first-principles simulations

Article

关键词: ALUMINUM-OXIDE FILMS;    CONDUCTANCE;    OXIDATION;    BARRIERS;    SILICON;    AL2O3;    LAYERS;   

DOI  :  10.1103/PhysRevB.87.195107

来源: SCIE

【 摘 要 】

Ultrathin AlOx layers are nowadays widely employed to make tunneling junctions and, as a common practice, experimental transport data are often rationalized in terms of analytical models invoking effective electronic and geometric properties of the oxide layer. In this paper we examine the reliability of such models by performing first-principles simulations of the transport properties of Al/AlOx/Al junctions. The band gap, effective mass, and interface width obtained from ground state density-functional calculations are used within a potential barrier model, known also as the Simmons model, and its predictions of the conductance are compared with first-principles results. We also propose an analytical expression for the conductance based on a tight-binding model of the interface oxide. We show that the success of the potential barrier model in fitting experimental transport measurements rests on its formal similarity with the tight binding model which, in contrast to the former, is directly related to the realistic electronic structure of the interface.

【 授权许可】

Free