Schottky barriers at hexagonal boron nitride/metal interfaces: A first-principles study

Article

关键词: CHEMICAL-VAPOR-DEPOSITION;    SCANNING-TUNNELING-MICROSCOPY;    AUGMENTED-WAVE METHOD;    METAL-SURFACES;    WORK FUNCTION;    GRAPHENE;    MONOLAYER;    CU(111);    STATES;    SUBSTRATE;   

DOI  :  10.1103/PhysRevB.90.085415

来源: SCIE

【 摘 要 】

The formation of a Schottky barrier at the interface between a metal and hexagonal boron nitride (h-BN) is studied using density functional theory. For metals whose work functions range from 4.2 to 6.0 eV, we find Schottky barrier heights for holes between 1.2 and 2.3 eV. A central role in determining the Schottky barrier height is played by a potential step of between 0.4 and 1.8 eV that is formed at the metal vertical bar h-BN interface and effectively lowers the metal work function. If h-BN is physisorbed, as is the case on fcc Cu, Al, Au, Ag, and Pt(111) substrates, the interface potential step is described well by a universal function that depends only on the distance separating h-BN from the metal surface. The interface potential step is largest when h-BN is chemisorbed, which is the case for hcp Co and Ti (0001) and for fcc Ni and Pd (111) substrates.

【 授权许可】

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