Electronic structures of UX3 (X = Al, Ga, and In) studied by photoelectron spectroscopy

Article

关键词: ITINERANT ANTIFERROMAGNET UGA3;    FERMI-SURFACE PROPERTIES;    URANIUM-COMPOUNDS;    INTERMETALLIC COMPOUNDS;    RESONANT PHOTOEMISSION;    SPECTRA;    HYBRIDIZATION;    TRANSITION;    UNDULATOR;    SYSTEM;   

DOI  :  10.1103/PhysRevB.96.115126

来源: SCIE

【 摘 要 】

The electronic structures of UX3 (X = Al, Ga, and In) were studied by photoelectron spectroscopy to understand the relationship between their electronic structures and magnetic properties. The band structures and Fermi surfaces of UAl3 and UGa3 were revealed experimentally by angle-resolved photoelectron spectroscopy (ARPES), and they were compared with the result of band-structure calculations. The topologies of the Fermi surfaces and the band structures of UAl3 and UGa3 were explained reasonably well by the calculation, although bands near the Fermi level (E-F) were renormalized owing to the finite electron correlation effect. The topologies of the Fermi surfaces of UAl3 and UGa3 are very similar to each other, except for some minor differences. Such minor differences in their Fermi surface or electron correlation effect might take an essential role in their different magnetic properties. No significant changes were observed between the ARPES spectra of UGa3 in the paramagnetic and antiferromagnetic phases, suggesting that UGa3 is an itinerant weak antiferromagnet. The effect of chemical pressure on the electronic structures of UX3 compounds was also studied by utilizing the smaller lattice constants of UAl3 and UGa3 than that of UIn3. The valence band spectrum of UIn3 is accompanied by a satellitelike structure on the high-binding-energy side. The core-level spectrum of UIn3 is also qualitatively different from those of UAl3 and UGa3. These findings suggest that the U 5f states in UIn3 are more localized than those in UAl3 and UGa3.

【 授权许可】

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