Nitrogen vacancy center in cubic silicon carbide: A promising qubit in the 1.5 mu m spectral range for photonic quantum networks

Article

关键词: DIAMOND;   

DOI  :  10.1103/PhysRevB.98.165203

来源: SCIE

【 摘 要 】

We have investigated the optical properties of the nitrogen vacancy (NV)(-) center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the E-3 -> (3)A(2) intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the NV- center in 3C-SiC has a ZPL line at 1.468 mu m in excellent agreement with theoretical predictions. The ZPL line can be observed up to T = 100 K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin S = 1 ground state and a spin S = 1 excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at 1.5 mu m, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics.

【 授权许可】

Free