Semiconductor band switching by charging a small grain with a single electron

Article

关键词: SCANNING-TUNNELING-MICROSCOPE;   

DOI  :  10.1103/PhysRevB.53.10695

来源: SCIE

【 摘 要 】

We observe a very abrupt change in the electron density in scanning tunneling microscope measurements on an InAs(110) surface in the vicinity of a small conductive grain. The observed features are a consequence of charge quantization on the grain, which acts as a single-electron gate electrode. The band bending at the surface changes stepwise when an extra electron is added to the grain, resulting in a sharp closed curve around the grain in topographic images. Features due to the screening of the residual charge of the grain are also discussed.

【 授权许可】

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