Interplay among critical temperature, hole content, and pressure in the cuprate superconductors | |
Article | |
关键词: ANGLE-RESOLVED PHOTOEMISSION; TRANSITION-TEMPERATURE; ELECTRONIC-STRUCTURE; GAP ANISOTROPY; PENETRATION-DEPTH; HALL-COEFFICIENT; OXYGEN-CONTENT; FERMI-SURFACE; DEPENDENCE; TC; | |
DOI : 10.1103/PhysRevB.54.15471 | |
来源: SCIE |
【 摘 要 】
Within a BCS-type mean-field approach to the extended Hubbard model, a nontrivial dependence of T-c on the hole content per unit CuO2 is recovered, in good agreement with the celebrated nonmonotonic universal behavior at normal pressure. Evaluation of T-c at higher pressures is then made possible by the introduction of an explicit dependence of the tight-binding band and of the carrier concentration on pressure P. Comparison with the known experimental data for underdoped Bi2212 allows us to single out an ''intrinsic'' contribution to dT(c)/dP from that due to the carrier concentration, and provides a remarkable estimate of the dependence of the intersite coupling strength on the lattice scale.
【 授权许可】
Free