Interplay among critical temperature, hole content, and pressure in the cuprate superconductors

Article

关键词: ANGLE-RESOLVED PHOTOEMISSION;    TRANSITION-TEMPERATURE;    ELECTRONIC-STRUCTURE;    GAP ANISOTROPY;    PENETRATION-DEPTH;    HALL-COEFFICIENT;    OXYGEN-CONTENT;    FERMI-SURFACE;    DEPENDENCE;    TC;   

DOI  :  10.1103/PhysRevB.54.15471

来源: SCIE

【 摘 要 】

Within a BCS-type mean-field approach to the extended Hubbard model, a nontrivial dependence of T-c on the hole content per unit CuO2 is recovered, in good agreement with the celebrated nonmonotonic universal behavior at normal pressure. Evaluation of T-c at higher pressures is then made possible by the introduction of an explicit dependence of the tight-binding band and of the carrier concentration on pressure P. Comparison with the known experimental data for underdoped Bi2212 allows us to single out an ''intrinsic'' contribution to dT(c)/dP from that due to the carrier concentration, and provides a remarkable estimate of the dependence of the intersite coupling strength on the lattice scale.

【 授权许可】

Free