Extraordinary Hall effect in (Ni80Fe20)(x)(SiO2)(1-x) thin films

Article

关键词: GIANT MAGNETORESISTANCE;    THICKNESS DEPENDENCE;    MAGNETIC-PROPERTIES;    GRANULAR METALS;    FERROMAGNETICS;    NANOPARTICLES;    MULTILAYERS;    COEFFICIENT;    CONDUCTION;    SYSTEM;   

DOI  :  10.1103/PhysRevB.70.224431

来源: SCIE

【 摘 要 】

The extraordinary Hall effect (EHE) in ferromagnetic samples is generally attributed to scatterings of iterant electrons in the presence of spin-orbit interactions. In this work, our study of the thickness dependence of the EHE in the (Ni80Fe20)(x)(SiO2)(1-x) system showed the spontaneous Hall resistivity, rho(xy)(S) to be quite independent of the film thickness while the Hall coefficient, R-S (=rho(xy)(S)/M-S, where M-S is the saturated magnetization), increased monotonically owing to a depression in M-S. We point out that the independence of rho(xy)(S) with reducing thickness could arise if the morphological structure of the sample becomes two dimensional with decreasing film thickness, which is expected from classical percolation theory. We also find in the (Ni80Fe20)(x)(SiO2)(1-x) system (with varying x) that rho(xy)(S)proportional torho(xx)(gamma) where gamma=0.53, which disagrees with the value of 2 frequently attributed to the side jump effect, but which can be explained in terms of the more general form rho(xy)(S)=rho(xx)Delta(ye)/Lambda(SO), where Delta(ye) is the side jump displacement and Lambda(SO) is the spin-orbit mean free path.

【 授权许可】

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