Impact of electron-electron interactions induced by disorder at interfaces on spin-dependent tunneling in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions

Article

关键词: METAL-INSULATOR-TRANSITION;    ROOM-TEMPERATURE;    MAGNETORESISTANCE;    RESISTANCE;    BARRIERS;    SPECTRA;   

DOI  :  10.1103/PhysRevB.82.060405

来源: SCIE

【 摘 要 】

In this study, we demonstrate that, beyond the standard magnon excitations, the electron-electron interactions in presence of disorder in CoFeB electrodes play a significant role on the zero-bias anomaly measured in CoFeB/MgO/CoFeB junctions. The low-temperature dependence of the tunneling conductance presents cusp-like dip at low voltage varying as the square root of the bias voltage. The amplitude of this zero-bias anomaly decreases with the annealing temperature, indicating interface crystallization and related increase in the tunnel magnetoresistance.

【 授权许可】

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