Enhanced thermopower under a time-dependent gate voltage

Article

关键词: SINGLE-ELECTRON SOURCE;    SILICON NANOWIRES;    TRANSPORT;    JUNCTIONS;   

DOI  :  10.1103/PhysRevB.83.153417

来源: SCIE

【 摘 要 】

We derive formal expressions of time-dependent energy and heat currents through a nanoscopic device using the Keldysh nonequilibrium Green function technique. Numerical results are reported for a metal-dot-metal junction where the dot level energy is abruptly changed by a step-shaped voltage pulse. Analytical linear responses are obtained for the time-dependent thermoelectric coefficients. We show that in the transient regime the Seebeck coefficient can be enhanced by an amount (as much as 40%) controlled by both the dot energy and the height of the voltage step.

【 授权许可】

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