Isotope effect on the lifetime of the 2p(0) state in phosphorus-doped silicon | |
Article | |
关键词: ISOTOPICALLY ENRICHED SI-28; THERMAL-CONDUCTIVITY; DONOR STATES; SI; SEMICONDUCTORS; TRANSITIONS; RELAXATION; EMISSION; HYDROGEN; PHONONS; | |
DOI : 10.1103/PhysRevB.88.035201 | |
来源: SCIE |
【 摘 要 】
The low-temperature (similar to 5 K) phonon-assisted relaxation of the 2p(0) state of phosphorus donors in isotopically pure, monocrystalline Si-28 has been studied in the time domain using a pump-probe technique. The lifetime of the 2p(0) state in Si-28: P is found to be 235 ps, which is 16% larger than the lifetime of a reference Si:P sample with a natural isotope composition. The interaction of the 2p(0) state with intervalley g-type longitudinal acoustic and f-type transverse acoustic phonons determines its lifetime. This interaction, which depends on the homogeneity of the crystal, becomes weaker in Si-28 because of its more perfect crystal lattice compared to natural Si, and this leads to a longer lifetime. The difference between the linewidths of the 1s(A(1)) -> 2p(0) transition in Si-28:P and natural Si:P is more than a factor of two. It follows that linewidth broadening due to isotopic composition is an inhomogeneous process.
【 授权许可】
Free