Strain-induced topological phase transition in phosphorene and in phosphorene nanoribbons

Article

关键词: BLACK PHOSPHORUS;    ELECTRONIC-STRUCTURE;    MOBILITY;    STATE;    FIELD;   

DOI  :  10.1103/PhysRevB.94.085417

来源: SCIE

【 摘 要 】

Using the tight-binding (TB) approximation with inclusion of the spin-orbit interaction, we predict a topological phase transition in the electronic band structure of phosphorene in the presence of axial strains. We derive a low-energy TB Hamiltonian that includes the spin-orbit interaction for bulk phosphorene. Applying a compressive biaxial in-plane strain and perpendicular tensile strain in ranges where the structure is still stable leads to a topological phase transition. We also examine the influence of strain on zigzag phosphorene nanoribbons (zPNRs) and the formation of the corresponding protected edge states when the system is in the topological phase. For zPNRs up to a width of 100 nm the energy gap is at least three orders of magnitude larger than the thermal energy at room temperature.

【 授权许可】

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