Transport properties of silicon implanted with bismuth

Article

关键词: METAL-INSULATOR-TRANSITION;    EXCITED SEMICONDUCTORS;    DOPED SEMICONDUCTORS;    RELAXATION-TIME;    SI-B;    CONDUCTIVITY;    RESISTIVITY;    SCATTERING;    SYSTEMS;    STATES;   

DOI  :  10.1103/PhysRevB.55.9584

来源: SCIE

【 摘 要 】

The Hall effect and resistivity of Si:Bi with donor concentration varying from 3.0X10(17) to 1.4X10(20) cm(-3) Were measured from room temperature down to 13 K. The samples were prepared by Bi+ implantation in Van der Pauw structures delineated in Si chips. The measured resistivities were compared with the ones calculated by a generalized Drude approach at similar temperatures and doping concentration, presenting fairly good agreement. The critical impurity concentration N-c of the metal-nonmetal transition was measured to be around 2X10(19) cm(-3). The critical concentration N-c was calculated by comparing the ionization energy of the insulating phase with the total energy of the metallic phase. This value of N-c agreed very well with the one obtained experimentally and the values estimated from other theoretical approaches.

【 授权许可】

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