High-temperature conductance of the single-electron transistor

Article

关键词: SMALL TUNNEL-JUNCTIONS;   

DOI  :  10.1103/PhysRevB.58.R10155

来源: SCIE

【 摘 要 】

The Linear conductance of the single-electron transistor is determined in the high-temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula. The theoretical predictions are valid for arbitrary conductance and are found to explain recent experimental data. [S0163-1829(98)50640-6].

【 授权许可】

Free