Maximum metallic conductivity in Si-MOS structures

Article

关键词: INSULATOR-TRANSITION;    2-DIMENSIONAL METAL;    2 DIMENSIONS;    DISORDERED-SYSTEMS;    SCALING THEORY;    ELECTRON-GAS;    B=0;    SUPERCONDUCTIVITY;    SPECTRUM;   

DOI  :  10.1103/PhysRevB.60.R2154

来源: SCIE

【 摘 要 】

We found that the conductivity of the two-dimensional electron system in Si metal-oxide-semiconductor structures is limited to a maximum value, G(max), as either density increases or temperature decreases. This value G(max) is weakly disorder dependent and ranges from 100 to 140e(2)/h for samples whose mobilities differ by a factor of 4. [S0163-1829(99)51528-2].

【 授权许可】

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